射頻電路設計︰理論與應用(英文版)

Chapter 1 Introduction
1.1 Importance of Radio Frequency Design
1.2 Dimensions and Units
1.3 Frequency Spectrum
1.4 RF Behavior of Passive Components
1.4.1 Resistors at High Frequency
1.4.2 Capacitors at High Frequency
1.4.3 Inductors at High Frequency
1.5 Chip Components and Circuit Board Considerations
1.5.1 Chip Resistors
1.5.2 Chip Capacitors
1.5.3 Surface-Mounted Inductors
1.6 RF Circuit Manufacturing Processes
1.7 Summary
Chapter 2 Transmission Line Analysis
2.1 Why Transmission Line Theory？
2.2 Examples of Transmission Lines
2.2.1 Two-Wire Lines
2.2.2 Coaxial Line
2.2.3 Microstrip Lines
2.3 Equivalent Circuit Representation
2.4 Theoretical Foundation
2.4.1 Basic Laws
2.5 Circuit Parameters for a Parallel-Plate Transmission Line
2.6 Summary of Different Line Configurations
2.7 General Transmission Line Equation
2.7.1 Kirchhoff Voltage and Current Law Representations
2.7.2 Traveling Voltage and Current Waves
2.7.3 Characteristic Impedance
2.7.4 Lossless Transmission Line Model
2.8 Microstrip Transmission Lines
2.9 Terminated Lossless Transmission Line
2.9.1 Voltage Reflection Coefficient
2.9.2 Propagation Constant and Phase Velocity
2.9.3 Standing Waves
2.10 Special Termination Conditions/63
2.10.1 Input Impedance of Terminated Lossless Line
2.10.2 Short-Circuit Terminated Transmission Line
2.10.3 Open-Circuited Transmission Line
2.10.4 Quarter-Wave Transmission Line
2.11 Sourced and Loaded Transmission Line
2.11.1 Phasor Representation of Source
2.11.2 Power Considerations for a Transmission Line
2.11.3 Input Impedance Matching
2.11.4 Return Loss and Insertion Loss
2.12 Summary
Chapter 3 The Smith Chart
3.1 From Reflection Coefficient to Load Impedance
3.1.1 Reflection Coefficient in Phasor Form
3.1.2 Normalized Impedance Equation
3.1.3 Parametric Reflection Coefficient Equation
3.1.4 Graphical Representation
3.2 Impedance Transformation
3.2.1 Impedance Transformation for General Load
3.2.2 Standing Wave Ratio
3.2.3 Special Transformation Conditions
3.2.4 Computer Simulations
3.3 Admittance Transformation
3.3.1 Parametric Admittance Equation
3.3.2 Additional Graphical Displays
3.4 Parallel and Series Connections
3.4.1 Parallel Connection of R and L Elements
3.4.2 Parallel Connection of R and C Elements
3.4.3 Series Connection of R and L Elements
3.4.4 Series Connection of R and C Elements
3.4.5 Example of a T-Network
3.5 Summary
Chapter 4 Single-and Multiport Networks
4.1 Basic Definitions
4.2 Interconnecting Networks
4.2.1 Series Connection of Networks
4.2.2 Parallel Connection of Networks
4.2.3 Cascading Networks
4.2.4 Summary of ABCD Network Representations
4.3 Network Properties and Applications
4.3.1 Interrelations between Parameter Sets
4.3.2 Analysis of Microwave Amplifier
4.4 Scattering Parameters
4.4.1 Definition of Scattering Parameters
4.4.2 Meaning of S-Parameters
4.4.3 Chain Scattering Matrix
4.4.4 Conversion between Z- and S-Parameters
4.4.5 Signal Flowgraph Modeling
4.4.6 Generalization of S-Parameters
4.4.7 Practical Measurements of S-Parameters
4.5 Summary
Chapter 5 An Overview of RF Filter Design
5.1 Basic Resonator and Filter Configurations
5.1.1 Filter Types and Parameters
5.1.2 Low-Pass Filter
5.1.3 High-Pass Filter
5.1.4 Bandpass and Bandstop Filters
5.1.5 Insertion Loss
5.2 Special Filter Realizations
5.2.1 Butterworth-Type Filters
5.2.2 Chebyshev-Type Filters
5.2.3 Denormalization of Standard Low-Pass Design
5.3 Filter Implementation
5.3.1 Unit Elements
5.3.2 Kuroda Identities
5.3.3 Examples of Microstrip Filter Design
5.4 Coupled Filter
5.4.1 Odd and Even Mode Excitation
5.4.2 Bandpass Filter Section
5.4.3 Cascading Bandpass Filter Elements
5.4.4 Design Example
5.5 Summary
Chapter 6 Active RF Components
6.1 Semiconductor Basics
6.1.1 Physical Properties of Semiconductors
6.1.2 The pn-Junction
6.1.3 Schottky Contact
6.2 RF Diodes
6.2.1 Schottky Diode
6.2.2 PIN Diode
6.2.3 Varactor Diode
6.2.4 IMPATT Diode
6.2.5 Tunnel Diode
6.2.6 TRAPATT，BARRITT，and Gunn Diodes
6.3 Bipolar-Junction Transistor
6.3.1 Construction
6.3.2 Functionality
6.3.3 Frequency Response
6.3.4 Temperature Behavior
6.3.5 Limiting Values
6.3.6 Noise Performance
6.4 RF Field Effect Transistors
6.4.1 Construction
6.4.2 Functionality
6.4.3 Frequency Response
6.4.4 Limiting Values
6.5 Metal Oxide Semiconductor Transistors
6.5.1 Construction
6.5.2 Functionality
6.6 High Electron Mobility Transistors
6.6.1 Construction
6.6.2 Functionality
6.6.3 Frequency Response
6.7 Semiconductor Technology Trends
6.8 Summary
Chapter 7 Active RF Component Modeling
7.1 Diode Models
7.1.1 Nonlinear Diode Model
7.1.2 Linear Diode Model
7.2 Transistor Models
7.2.1 Large-Signal BJT Models
7.2.2 Small-Signal BJT Models
7.2.3 Large-Signal FET Models
7.2.4 Small-Signal FET Models
7.2.5 Transistor Amplifier Topologies
7.3 Measurement of Active Devices
7.3.1 DC Characterization of Bipolar Transistor
7.3.2 Measurements of AC Parameters of Bipolar Transistors
7.3.3 Measurements of Field Effect Transistor Parameters
7.4 Scattering Parameter Device Characterization
7.5 Summary
Chapter 8 Matching and Biasing Networks
8.1 Impedance Matching Using Discrete Components
8.1.1 Two-Component Matching Networks
8.1.2 Forbidden Regions，Frequency Response，and Quality Factor
8.1.3 T and Pi Matching Networks
8.2 Microstrip Line Matching Networks
8.2.1 From Discrete Components to Microstrip Lines
8.2.2 Single-Stub Matching Networks
8.2.3 Double-Stub Matching Networks
8.3 Amplifier Classes of Operation and Biasing Networks
8.3.1 Classes of Operation and Efficiency of Amplifiers
8.3.2 Bipolar Transistor Biasing Networks
8.3.3 Field Effect Transistor Biasing Networks
8.4 Summary
Chapter 9 RF Transistor Amplifier Design
9.1 Characteristics of Amplifiers
9.2 Amplifier Power Relations
9.2.1 RF Source
9.2.2 Transducer Power Gain
9.2.3 Additional Power Relations
9.3 Stability Considerations
9.3.1 Stability Circles
9.3.2 Unconditional Stability
9.3.3 Stabilization Methods
9.4 Constant Gain
9.4.1 Unilateral Design
9.4.2 Unilateral Figure of Merit
9.4.3 Bilateral Design
9.4.4 Operating and Available Power Gain Circle
9.5 Noise Figure Circles
9.6 Constant VSWR Circles
9.7 Broadband，High-Power，and Multistage Amplifiers
9.7.1 Broadband Amplifiers
9.7.2 High-Power Amplifiers
9.7.3 Multistage Amplifiers
9.8 Summary
Chapter 10 Oscillators and Mixers
10.1 Basic Oscillator Models
10.1.1 Feedback Oscillator
10.1.2 Negative Resistance Oscillator
10.1.3 Oscillator Phase Noise
10.1.4 Feedback Oscillator Design
10.1.5 Design Steps/465
10.1.6 Quartz Oscillators
10.2 High-Frequency Oscillator Configuration
10.2.1 Fixed-Frequency Oscillators
10.2.2 Dielectric Resonator Oscillators
10.2.3 YIG-Tuned Oscillator
10.2.4 Voltage-Controlled Oscillator
10.2.5 Gunn Element Oscillator
10.3 Basic Characteristics of Mixers
10.3.1 Basic Concepts
10.3.2 Frequency Domain Considerations
10.3.3 Single-Ended Mixer Design
10.3.4 Single-Balanced Mixer
10.3.5 Double-Balanced Mixer
10.3.6 Integrated Active Mixers
10.3.7 Image Reject Mixer
10.4 Summary
Appendix A Useful Physical Quantities and Units
Appendix B Skin Equation for a Cylindrical Conductor
Appendix C Complex Numbers
Appendix D Matrix Conversions
Appendix E Physical Parameters of Semiconductors
Appendix F Long and Short Diode Models
Appendix G Couplers
Appendix H Noise Analysis
Appendix I Introduction to MATLAB

2001年7月間，電子工業出版社的領導同志邀請各高校十幾位通信領域方面的老師，商量引進國外教材問題。與會同志對出版社提出的計劃十分贊同，大家認為，這對我國通信事業、特別是對高等院校通信學科的教學工作會很有好處。

教材建設是高校教學建設的主要內容之一。編寫、出版一本好的教材，意味著開設了一門好的課程，甚至可能預示著一個嶄新學科的誕生。20世紀40年代MIT林肯實驗室出版的一套28本雷達叢書，對近代電子學科、特別是對雷達技術的推動作用，就是一個很好的例子。

我國領導部門對教材建設一直非常重視。20世紀80年代，在原教委教材編審委員會的領導下，匯集了高等院校幾百位富有教學經驗的專家，編寫、出版了一大批教材︰很多院校還根據學校的特點和需要，陸續編寫了大量的講義和參考書。這些教材對高校的教學工作發揮了極好的作用。近年來，隨著教學改革不斷深入和科學技術的飛速進步，有的教材內容已比較陳舊、落後，難以適應教學的要求，特別是在電子學和通信技術發展神速、可以講是曰新月異的今天，如何適應這種情況，更是一個必須認真考慮的問題。解決這個問題，除了依靠高校的老師和專家撰寫新的符台要求的教科書外，引進和出版一些國外優秀電子與通信教材，尤其是有選擇地引進一批英文原版教材，是會有好處的。

一年多來，電子工業出版社為此做了很多工作。他們成立了一個“國外電子與通信教材系列”項目組，選派了富有經驗的業務骨干負責有關工作，收集了230余種通信教材和參考書的詳細資料，調來了100余種原版教材樣書，依靠由20余位專家組成的出版委員會，從中精選了40多種，內容豐富，覆蓋了電路理論與應用、信號與系統、數字信號處理、微電子、通信系統、電磁場與微波等方面，既可作為通信專業本科生和研究生的教學用書，也可作為有關專業人員的參考材料。此外，這批教材，有的翻譯為中文，還有部分教材直接影印出版，以供教師用英語直接授課。希望這些教材的引進和出版對高校通信教學和教材改革能起一定作用。

在這里，我還要感謝參加工作的各位教授、專家、老師與參加翻譯、編輯和出版的同志們。各位專家認真負責、嚴謹細致、不辭辛勞、不怕瑣碎和精益求精的態度，充分體現了中國教育工作者和出版工作者的良好美德。

隨著我國經濟建設的發展和科學技術的不斷進步，對高校教學工作會不斷提出新的要求和希望。我想，無論如何，要做好引進國外教材的工作,一定要聯系我國的實際。教材和學術專著不同，既要注意科學性、學術性，也要重視可讀性，要深入淺出，便于讀者自學︰引進的教材要適應高校教學改革的需要，針對目前一些教材內容較為陳舊的問題，有目的地引進一些先進的和正在發展中的交叉學科的參考書；要與國內出版的教材相配套，安排好出版英文原版教材和翻譯教材的比例。我們努力使這套教材能盡量滿足上述要求，希望它們能放在學生們的課桌上，發揮一定的作用。

最後，預祝“國外電子與通信教材系列”項目取得成功，為我國電子與通信教學和通信產業的發展培土施肥。也懇切希望讀者能對這些書籍的不足之處、特別是翻譯中存在的問題，提出意見和建議，以便再版時更正。

吳佑壽
中國工程院院士、清華大學教授
“國外電子與通信教材系列”出版委員會主任